NCE60P50

Description
The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

General Features
●  VDS =-60V,ID =-50A
    RDS(ON) <28mΩ @ VGS=-10V
●  High density cell design for ultra low Rdson
●  Fully characterized avalanche voltage and current
●  Good stability and uniformity with high EAS
●  Excellent package for good heat dissipation

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