NCE40P13S

Description
The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
●  VDS =-40V,ID =-13A
    RDS(ON) <12mΩ @ VGS=-10V
●  High density cell design for ultra low Rdson
●  Fully characterized avalanche voltage and current
●  Excellent package for good heat dissipation

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