NCE01P30L

 Description

The NCE01P30Luses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. It is ESD protested.

General Features

 ● VDS=-100V,ID =-30A

 RDS(ON) <58mΩ@ VGS=-10V  (Typ:50mΩ)

 ● Super high dense cell design

 ● Advanced trench process technology

 ● Reliableand rugged

 ● High density cell design for ultra low On-Resistance

Application

Portable equipment and battery powered systems

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