The NCE01H29TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.
● VDSS =100V,ID =290A
RDS(ON) < 3.2mΩ @ VGS=10V （Typ：2.7mΩ）
● Good stability and uniformity with high EAS
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation