NCE01H29TC

Description
The NCE01H29TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.

General Features
● VDSS =100V,ID =290A
   RDS(ON) < 3.2mΩ @ VGS=10V (Typ:2.7mΩ)
● Good stability and uniformity with high EAS
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

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