NCE75H11

Description
The NCE75H11 uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS = 75V,I D =110A
R DS(ON) < 9m? @ V GS =10V (Typ:7.5m?)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

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