NCE0103M

Description
The NCE0103M uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS = 100V,I D = 3A
R DS(ON) <160m? @ V GS =10V (Typ:136m?)
R DS(ON) <170m? @ V GS =4.5V (Typ:140m?)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

请您留言

留言
*
*
*
*
*
*