The NCE0115K uses advanced trench technology and design toprovide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.
● VDS =100V,ID =15A
RDS(ON) < 100mΩ @ VGS=10V
● High density cell design forultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability anduniformity with high EAS
● Excellent package for good heat dissipation
● Special processtechnology for high ESD capability