NCE0115K

Description

The NCE0115K uses advanced trench technology and design toprovide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

 

General Features

VDS =100V,ID =15A

RDS(ON) < 100mΩ @ VGS=10V 

High density cell design forultra low Rdson

Fully characterized avalanche voltage and current

Good stability anduniformity with high EAS

Excellent package for good heat dissipation

Special processtechnology for high ESD capability

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