The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
● VDS =30V,ID =10A
RDS(ON) < 12mΩ @ VGS=10V
RDS(ON) <16mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current