NCE30D2519K

Description
The NCE30D2519K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.

General Features

N channel
● VDS =30V,I D =25A
RDS(ON) <12m? @ V GS =10V
RDS(ON) <18m? @ V GS =4.5V
P channel
● V DS =-30V,I D =-19A
RDS(ON) <35m? @ V GS =-10V
RDS(ON) <65m? @ V GS =-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● H-bridge
● Inverters

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