NCE6602N

Description

The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application.

General Features

● N-Channel
● VDS = 30V,ID = 3.5A
RDS(ON) <58mΩ @ VGS=10V
RDS(ON) < 95mΩ @ VGS=4.5V
● P-Channel
VDS = -30V,ID = -2.7A
RDS(ON) < 100mΩ @ VGS=-10V
RDS(ON) < 150mΩ @ VGS=-4.5V
● Low On-Resistance
● Low Input Capacitance
● Fast Switching Speed
● Low Input/Output Leakage

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