NCE1205

Description

The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General Features

● N-Channel
VDS =12V,ID =5A
RDS(ON) <29mΩ @ VGS=4.5V
RDS(ON) <34mΩ @ VGS=2.5V
RDS(ON) < 44mΩ @ VGS=1.8V
● P-Channel
VDS = -12V,ID = -5A
RDS(ON) <61mΩ @ VGS=-4.5V
RDS(ON) <81mΩ @ VGS=-2.5V
RDS(ON) < 115mΩ @ VGS=-1.8V
● Load Switch for Portable Devices


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