NCE30H11BK

Description

The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

 

General Features

VDS =30V,ID =110A

RDS(ON) =3.2mΩ (typical) @ VGS=10V

RDS(ON) =4.0mΩ (typical) @ VGS=4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

 

Application

DC/DC converters

Synchronous Rectifier

 

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