NCE30ND07S

Description
The NCE30ND07S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,I D =7A
R DS(ON) < 23m? @ V GS =10V
R DS(ON) < 40m? @ V GS =4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply


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