NCE80N03K

Description

The NCE80N03K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It

can be used in a wide variety of applications.

General Features

● V DS =30V,I D =80A

R DS(ON) <6.5mΩ @ V GS =10V

R DS(ON) < 10mΩ @ V GS =5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E AS

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply


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