NCE50N03K

Description

The NCE50N03K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.

General Features

● V DS =30V,I D =50A

R DS(ON) < 8mΩ @ V GS =10V

R DS(ON) < 12mΩ @ V GS =5V

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible Power Supply


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