NCE6007S

Description
The NCE6007S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS =60V,I D =7A
R DS(ON) < 30m? @ V GS =10V (Typ:24m?)
R DS(ON) < 35m? @ V GS =4.5V (Typ:27m?)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

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