NCE5015S

Description
The NCE5015S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS = 60V,I D =12A
R DS(ON) < 7.6m? @ V GS =10V (Typ:5.7m?)
R DS(ON) < 8.0m? @ V GS =4.5V (Typ:6.3m?)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
● Load switch

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