NCE40ND0812S

Description
The NCE40ND0812S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS =40V,I D =8A V DS =40V,I D =12A
R DS(ON) < 18m? @ V GS =10V R DS(ON) < 14m? @ V GS =10V
R DS(ON) < 28m? @ V GS =4.5V R DS(ON) < 20m? @ V GS =4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

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