NCE0130K

Description
The NCE0130K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS = 100V,ID =30A
   RDS(ON) < 30mΩ @ VGS=10V (Typ:24mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

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