NCE33H29D

Description

The NCE33H29D usesadvanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications.

General Features

VDS=33V ,ID =290A

    RDS(ON) < 1.8mΩ@ VGS=10V 

 High density cell design for ultra low Rdson

Fullycharacterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellentpackage for good heat dissipation

Specialprocess technology for high ESD capability

 Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

 

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