NCE6012AS

 

Description

The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

 

General Features

VDS = 60V,ID =12A

RDS(ON) < 11mΩ @ VGS=10V  (Typ:8.5mΩ)

RDS(ON) < 12mΩ @ VGS=4.5V  (Typ:9.1mΩ)

 

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Low gate to drain charge to reduce switching losses

 

Application

Power switching application

Load switch


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