The NCE6080K usesadvanced trench technology and design to provide excellent RDS(ON) withlow gate charge. It can be used in a wide variety of applications.
● VDS=60V,ID =
RDS(ON) <8.5mΩ@ VGS=10V
● High density cell design for ultra low Rdson
● Fullycharacterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellentpackage for good heat dissipation
● Load Switching