The NCE2025S uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
●V DS =20V,I D =25A
R DS(ON) < 4m? @ V GS =4.5V
R DS(ON) < 6m? @ V GS =2.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current