NCE8651Q

Description
The NCE8651Q uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS =20V,I D =10A
R DS(ON) < 11m? @ V GS =4.5V
R DS(ON) < 11.5m? @ V GS =4V
R DS(ON) < 12.5m? @ V GS =3.1V
R DS(ON) < 15.5m? @ V GS =2.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● 2.5V Drive
● Common-drain type

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