NCE60H10F

Description
The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Feature
● VDS =60V,ID =100A
    RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

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