NCE20H11K

Description
The NCE20H11K uses advanced trench technology anddesign to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS =20V,I D =110A
R DS(ON) <4m? @ V GS =10V (Typ3m?)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

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