NCE5520Q

Description

The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features

● VDS =55V,ID =20A
    RDS(ON) < 22mΩ @ VGS=10V (Typ:19mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current

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