The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
● VDS =55V,ID =20A
RDS(ON) < 22mΩ @ VGS=10V (Typ:19mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current