NCE30H10

Description
The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.


General Features
●  VDS =30V,ID =100A
    RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
●  High density cell design for ultra low Rdson
●  Fully characterized avalanche voltage and current
●  Good stability and uniformity with high EAS
●  Excellent package for good heat dissipation
●  Special process technology for high ESD capability

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