Description
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
●  VDS =30V,ID =10A
    RDS(ON) < 12mΩ @ VGS=10V
    RDS(ON) <16mΩ @ VGS=4.5V
●  High density cell design for ultra low Rdson
●  Fully characterized Avalanche voltage and current