NCE3035G

Description
The NCE3035G uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS =30V,I D =35A
R DS(ON) < 7.0m? @ V GS =10V
R DS(ON) < 12m? @ V GS =4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Secondary side synchronous rectifier
● High side switch in POL DC/DC converte

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