NCE2010E

Description
The NCE2010E uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● V DS  = 20V,I D =7A
R DS(ON) < 24m? @ V GS =2.5V
R DS(ON) < 18m? @ V GS =4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package

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