NCE2012

Description
The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
●VDS =20V,ID =12A
   RDS(ON) < 8mΩ @ VGS=10V
   RDS(ON) < 11mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current

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